P90N55F4 Description
This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure.
P90N55F4 Key Features
- Exceptional dv/dt capability
- Extremely low on-resistance RDS(on)
- 100% avalanche tested