PD55015-E Datasheet PDF - STMicroelectronics RF power transistor Specs

PD55015-E - RF power transistor

Datasheet Summary

Description

The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

Features

Excellent thermal stability Common source configuration POUT = 15W with 14dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead).

Datasheet Details

Part number	PD55015-E
Manufacturer	STMicroelectronics
File Size	420.86 KB
Description	RF power transistor
Datasheet	PD55015-E Datasheet
Additional preview pages of the PD55015-E datasheet.

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Full PDF Text Transcription

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PD55015-E PD55015S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15W with 14dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.

Published: Jul 10, 2007 |