PD55025-E Datasheet PDF - STMicroelectronics RF POWER transistor Specs

PD55025-E - RF POWER transistor

Datasheet Summary

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies up to 1 GHz.

Features

Excellent thermal stability.
Common source configuration.
POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V.
New RF plastic package.

Datasheet Details

Part number	PD55025-E
Manufacturer	STMicroelectronics
File Size	498.32 KB
Description	RF POWER transistor
Datasheet	PD55025-E Datasheet
Additional preview pages of the PD55025-E datasheet.

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Full PDF Text Transcription

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PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio.

Published: Sep 20, 2018 |