PD55025S-E Datasheet | STMicroelectronics

PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features - Excellent thermal stability - mon source configuration - POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V - New RF plastic package Description The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s...