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PD57006S-E - RF POWER transistor

Download the PD57006S-E datasheet PDF. This datasheet also covers the PD57006-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 6 W with 15dB gain @ 945 MHz / 28 V.
  • New RF plastic package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD57006-E-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio.