STMicroelectronics PD57002-E
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V.| Part No. | PD57002-E |
|---|---|
| Datasheet | PD57002-E Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT = 2 W with 15dB gain @ 960 MHz / 28 V
● New RF plastic package
DESCRIPTION
It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. PowerSO-10RF (formed lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order code PD5
