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PD57002-E Datasheet Rf Power Transistor

Manufacturer: STMicroelectronics

Overview: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production.

General Description

The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1 GHz.

The device is designed for high gain and broadband performance operating in mon source mode at 28 V.

It is ideal for digital cellular BTS applications requiring high linearity.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 2 W with 15dB gain @ 960 MHz / 28 V.
  • New RF plastic package.

PD57002-E Distributor