PD57070-E Datasheet | STMicroelectronics

Features - Excellent thermal stability - mon source configuration - POUT = 70 W with 14.7d B gain @945 MHz/28 V - New RF plastic package Description The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and...