Datasheet4U Logo Datasheet4U.com

PD57070S-E Datasheet RF POWER transistor

Manufacturer: STMicroelectronics

Download the PD57070S-E datasheet PDF. This datasheet also includes the PD57070-E variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD57070-E-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies up to 1 GHz.

Overview

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 70 W with 14.7dB gain @945 MHz/28 V.
  • New RF plastic package.