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PD57070S-E

Manufacturer: STMicroelectronics

PD57070S-E datasheet by STMicroelectronics.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PD57070S-E datasheet preview

PD57070S-E Datasheet Details

Part number PD57070S-E
Datasheet PD57070S-E PD57070-E Datasheet (PDF)
File Size 483.71 KB
Manufacturer STMicroelectronics
Description RF POWER transistor
PD57070S-E page 2 PD57070S-E page 3

PD57070S-E Overview

The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies up to 1 GHz.

PD57070S-E Key Features

  • Excellent thermal stability
  • mon source configuration
  • POUT = 70 W with 14.7dB gain @945 MHz/28 V
  • New RF plastic package
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PD57070S-E Distributor

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