STMicroelectronics RF4L10700CB4
The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation.| Part No. | RF4L10700CB4 |
|---|---|
| Datasheet | RF4L10700CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 700W 40V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched pair transistors in push-pull configuration
● Large positive and negative gate-source voltage range for improved class C operation
● Optimized for Doherty applications
● Excellent thermal stability, low HCI drift
● In compliance with the European directive 2002/95/EC
APPLICATIONS
● ISM● RF energy
DESCRIPTION
It is qualified up to 40 V operation. Product status link RF4L10700CB4 Product summary Order code RF4L10700CB4 Marking 4L10700 Package D4E Packing Tray Base/bulk quantity 20/100 DS13741 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office. RF4L10700CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
