RF4L10700CB4
RF4L10700CB4 is RF power LDMOS transistor manufactured by STMicroelectronics.
700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
2 5
3 D4E
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
Frequency
POUT
Gain Efficiency
915 MHz
40 V
700 W
15 dB
70%
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched pair transistors in push-pull configuration
- Large positive and negative gate-source voltage range for improved class C operation
- Optimized for Doherty applications
- Excellent thermal stability, low HCI drift
- In pliance with the European directive 2002/95/EC
Applications
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