RF4L10700CB4 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF4L10700CB4
Manufacturer	STMicroelectronics
File Size	521.01 KB
Description	RF power LDMOS transistor
Datasheet	RF4L10700CB4 Datasheet
Additional preview pages of the RF4L10700CB4 datasheet.

Product details

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range.

Features

Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched pair transistors in push-pull configuration.
Large positive and negative gate-source voltage range for improved class C operation.
Optimized for Doherty.

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Published: Mar 19, 2023 |