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RF4L15400CB4 Datasheet RF Power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF4L15400CB4 is a 400 W, 50 V high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 1.2 to 1.5 GHz.

It is qualified up to 40 V operation.

Product status link RF4L15400CB4 Product summary Order code RF4L15400CB4 Marking 4L15400 Package D4E Packing Tray Base/bulk quantity 20/100 DS13645 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF4L15400CB4 Datasheet 400 W, 40 V, 1.2 to 1.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF4L15400CB4 1.5 GHz 40 V 400 W 18.5 dB 57%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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