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RF4L15400CB4 - RF Power LDMOS transistor

Datasheet Summary

Description

The RF4L15400CB4 is a 400 W, 50 V high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 1.2 to 1.5 GHz.

It is qualified up to 40 V operation.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF4L15400CB4 1.5 GHz 40 V 400 W 18.5 dB 57%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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Datasheet preview – RF4L15400CB4

Datasheet Details

Part number RF4L15400CB4
Manufacturer STMicroelectronics
File Size 1.62 MB
Description RF Power LDMOS transistor
Datasheet download datasheet RF4L15400CB4 Datasheet
Additional preview pages of the RF4L15400CB4 datasheet.

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Full PDF Text Transcription

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RF4L15400CB4 Datasheet 400 W, 40 V, 1.2 to 1.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF4L15400CB4 1.5 GHz 40 V 400 W 18.5 dB 57% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European directive 2002/95/EC Applications • 1.3 and 1.
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