STMicroelectronics RF5L05950CF2
The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industrial, scientific and medical application, as well as FM radio, VHF TV and aerospace applications.| Part No. | RF5L05950CF2 |
|---|---|
| Datasheet | RF5L05950CF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 950W 50V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF5L05950CF2(1) 108 MHz 50 V 2000 W 20 dB 76% 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull.● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC
APPLICATIONS
● 30-88 MHz/136-174 MHz ground communication● 1.6-30 MHz HF transceiver
● Plasma generator
● Particle accelerator
● FM and VHF TV broadcast
DESCRIPTION
It can be used for both CW and pulse application. DS13747 - Rev 2 - December 2021 For further information contact your local STMicroelectronics sales office. RF5L05950CF2 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Value Unit 110 V -8 to 10 V 55 V -65 to 150 °C 200 °C Table 2.
