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RF5L05950CF2 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz.

It can be used for both CW and pulse application.

It is featured for high power and high ruggedness, suitable for industrial, scientific and medical application, as well as FM radio, VHF TV and aerospace applications.

Overview

RF5L05950CF2 Datasheet 950 W, 50 V, HF to 500 MHz RF power LDMOS transistor 2 1 3 C2 Pin connection Pin Connection 1 Gate 2 Drain 3 Source (bottom side) Product status link RF5L05950CF2 Product summary Order code.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L05950CF2(1) 108 MHz 50 V 2000 W 20 dB 76% 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95.

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