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RF5L10111K0CB4 Datasheet Rf Power Ldmos Transistor

Manufacturer: STMicroelectronics

Overview: RF5L10111K0CB4 Datasheet 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

General Description

The RF5L10111K0CB4 is a 1000 W, 50 V high performance, internally matched LDMOS transistor, designed for avionic applications in the frequency range from 1030 to 1090 MHz.

Product status link RF5L10111K0CB4 Product summary Order code RF5L10111K0CB4 Marking 5L10111K0 Package D4E Packing Tray Base/bulk quantity 20/100 DS13644 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office.

www.st.com RF5L10111K0CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L10111K0CB4 1030 MHz 50 V 1000 W 14.5 dB 52%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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