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RF5L10111K0CB4 - RF power LDMOS transistor

Description

The RF5L10111K0CB4 is a 1000 W, 50 V high performance, internally matched LDMOS transistor, designed for avionic applications in the frequency range from 1030 to 1090 MHz.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L10111K0CB4 1030 MHz 50 V 1000 W 14.5 dB 52%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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Datasheet preview – RF5L10111K0CB4

Datasheet Details

Part number RF5L10111K0CB4
Manufacturer STMicroelectronics
File Size 1.53 MB
Description RF power LDMOS transistor
Datasheet download datasheet RF5L10111K0CB4 Datasheet
Additional preview pages of the RF5L10111K0CB4 datasheet.

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Full PDF Text Transcription

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RF5L10111K0CB4 Datasheet 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF5L10111K0CB4 1030 MHz 50 V 1000 W 14.
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