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RF5L15030CB2 - RF power LDMOS transistor

Description

The RF5L15030CB2 is a 30 W, 50 V, LDMOS FET designed for applications in the frequency range from HF to 1.5 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L15030CB2 1 GHz 50 V 30 W 23.5 dB 50%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • In compliance with the European directive 2002/95/EC.

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Datasheet preview – RF5L15030CB2

Datasheet Details

Part number RF5L15030CB2
Manufacturer STMicroelectronics
File Size 921.95 KB
Description RF power LDMOS transistor
Datasheet download datasheet RF5L15030CB2 Datasheet
Additional preview pages of the RF5L15030CB2 datasheet.

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Full PDF Text Transcription

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RF5L15030CB2 Datasheet 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor 1 3 2 GXB Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency RF5L15030CB2 1 GHz 50 V 30 W 23.5 dB 50% • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Applications • Industrial, scientific and medical from HF to 1.5 GHz • FM and TV broadcast • HV/VHF ground communications • Avionics and L-band radar • Wideband communications Description The RF5L15030CB2 is a 30 W, 50 V, LDMOS FET designed for applications in the frequency range from HF to 1.5 GHz.
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