Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Features
Order code SCT012H90G3AG
VDS 900 V
RDS(on) typ. 12 mΩ
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
ID 110 A
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced...