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SCT012W90G3AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Key Features

  • Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB).
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3).

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SCT012W90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package Features Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.