Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Features
- TAB 7
Order code SCT014HU65G3AG
VDS 650 V
RDS(on) typ. 13.5 mΩ
ID 110 A
Gate (1) Driver source (2)
1 HU3PAK
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB.
- AEC-Q101 qualified.
- Very low RDS(on) over the entire temperature range.
- High speed switching performances.
- Very fast and robust intrinsic body diode.
- Source sensing pin for increased efficiency.
SCT014HU65G3AG Datasheet
