Datasheet4U Logo Datasheet4U.com

SCT015W120G3-4AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Key Features

  • Order code SCT015W120G3-4AG VDS 1200 V RDS(on) typ. 15 mΩ ID 129 A HiP247-4 2 34 1 Drain(1, TAB).
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Source sensing pin for increased efficiency Gate(4) Driver source(3).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SCT013003-V01 LCD MODULE SINOCRYSTAL
SCT018001-V01 LCD MODULE SINOCRYSTAL
SCT01L60 1A Logic Level Triac KODENSHI
SCT009003-V01 LCD MODULE SINOCRYSTAL
SCT009004-V01 LCD MODULE SINOCRYSTAL

Other Datasheets by STMicroelectronics

Part Number Description
SCT011H75G3AG Automotive-grade silicon carbide Power MOSFET
SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET
SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET
SCT014HU65G3AG Automotive-grade silicon carbide Power MOSFET
SCT018H65G3AG Automotive-grade silicon carbide Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SCT015W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package Features Order code SCT015W120G3-4AG VDS 1200 V RDS(on) typ. 15 mΩ ID 129 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.