SCT020W120G3-4AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an Hi P247-4 package Features Order code SCT020W120G3-4AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A Hi P247-4 2 34 1 Drain(1, TAB) - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Very high operating junction temperature capability (TJ = 200 °C) - Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 - DC/DC converter for EV/HEV - Main inverter (electric traction) - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device Features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT020W120G3-4AG Product summary Order code SCT020W120G3-4AG Marking 20W120G34AG Package...