SCT027H65G3AG Overview
Key Specifications
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Key Features
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6
