SCT027H65G3AG Datasheet | STMicroelectronics

Features Order code SCT027H65G3AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-ch G1DS2PS34567DTAB Applications - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT027H65G3AG Product summary Order code Marking 27H65G3AG Package H²PAK-7 Packing Tape and reel DS14149 - Rev 1 - November 2022 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source...