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SCT040H120G3-7 Datasheet Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT040H120G3-7 Datasheet Silicon carbide Power MOSFET 1200 V, 40 mΩ typ.

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

  • Order code VDS RDS(on) typ. ID SCT040H120G3-7 1200 V 40 mΩ 40 A.
  • Very fast and robust intrinsic body diode.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Source sensing pin for increased efficiency.

SCT040H120G3-7 Distributor

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