SCT040H120G3-7
SCT040H120G3-7 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code
RDS(on) typ.
1200 V
40 mΩ
40 A
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- Power supply for renewable energy systems
- DC-DC converters
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd...
