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SCT040HU120G3AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT040HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ.

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

  • TAB Order code VDS RDS(on) typ. ID 7 SCT040HU120G3AG 1200 V 40 mΩ 40 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Source sensing pin for increased efficiency.

SCT040HU120G3AG Distributor

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