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SCT040HU120G3AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Key Features

  • TAB Order code VDS RDS(on) typ. ID 7 SCT040HU120G3AG 1200 V 40 mΩ 40 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Source sensing pin for increased efficiency.

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SCT040HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package Features TAB Order code VDS RDS(on) typ. ID 7 SCT040HU120G3AG 1200 V 40 mΩ 40 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • DC/DC converter for EV/HEV • Main inverter (electric traction) • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.