SCT040W120G3-4AG
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Key Features
- Order code SCT040W120G3-4AG
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Applications
- Main inverter (electric traction)
