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SCT040W120G3AG Datasheet

Manufacturer: STMicroelectronics
SCT040W120G3AG datasheet preview

Datasheet Details

Part number SCT040W120G3AG
Datasheet SCT040W120G3AG-STMicroelectronics.pdf
File Size 230.51 KB
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
SCT040W120G3AG page 2 SCT040W120G3AG page 3

SCT040W120G3AG Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT040W120G3AG Key Features

  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
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