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SCT040W65G3-4 Datasheet

Manufacturer: STMicroelectronics
SCT040W65G3-4 datasheet preview

Datasheet Details

Part number SCT040W65G3-4
Datasheet SCT040W65G3-4-STMicroelectronics.pdf
File Size 478.92 KB
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
SCT040W65G3-4 page 2 SCT040W65G3-4 page 3

SCT040W65G3-4 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT040W65G3-4 Key Features

  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency
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