SCT040W65G3-4 Overview
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT040W65G3-4 Key Features
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency