Datasheet Details
| Part number | SCT040W65G3-4 |
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| Manufacturer | STMicroelectronics |
| File Size | 478.92 KB |
| Description | Silicon carbide Power MOSFET |
| Datasheet |
 SCT040W65G3-4 Datasheet
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General Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Key Features
- HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A.
- Very low RDS(on) over the entire temperature range.
- High speed switching performances.
- Very fast and robust intrinsic body diode.
- Very high operating junction temperature capability (TJ = 200 °C).
- Source sensing pin for increased efficiency.