STMicroelectronics SCT040W65G3-4
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT040W65G3-4 |
|---|---|
| Datasheet | SCT040W65G3-4 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247-4 2 34 1 Drain(1, TAB) Order code VDS RDS(on) typ. ID SCT040W65G3-4 650 V 45 mΩ 30 A● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Very high operating junction temperature capability (TJ = 200 °C)
● Source sensing pin for increased efficiency
APPLICATIONS
Gate(4) Driver source(3)● Switching mode power supply
● Power supply for renewable energy systems
● DC-DC converters Power source(2) ND1TPS2DS3G4
DESCRIPTION
Product status link SCT040W65G3-4 Product summary Order code SCT040W65G3-4 Marking 040W65G3 Package HiP247-4 Packing Tube DS14582 - Rev 1 - January 2024 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain curr...
