SCT060W75G3AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an Hi P247 package Features Order code SCT060W75G3AG VDS 750 V RDS(on) typ. 60 mΩ ID 30 A Hi P247 3 2 D(2, TAB) - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3) Applications - DC/DC converter for EV/HEV - Main inverter (electric traction) - On board charger (OBC) AM01475v1_no Zen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device Features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT060W75G3AG Product summary Order code Marking 60W75G3AG Package Hi...