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SCT060W75G3AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT060W75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ.

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

  • Order code SCT060W75G3AG VDS 750 V RDS(on) typ. 60 mΩ ID 30 A HiP247 3 2 1 D(2, TAB).
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3).

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SCT060W75G3AG Distributor