STMicroelectronics SCT10N120
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT10N120 |
|---|---|
| Datasheet | SCT10N120 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 12A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247 3 2 1 D(2, TAB)● Very low RDS(on) over the entire temperature range
● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● AC-DC converters● DC-DC converters
● Motor drives
● Solar inverters (string and central)
● Uninterruptable power supplies (UPS) G(1) S(3)
DESCRIPTION
AM01475v1_noZen The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120 Product summary Order code SCT10N120 Marking SCT10N120 Package HiP247 Packing Tube DS10954 - Rev 4 - March 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ra...
