SCT10N120AG
Overview
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
- AEC-Q101 qualified
- Very tight variation of on-resistance vs. temperature
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
