STMicroelectronics SCT10N120AG
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT10N120AG |
|---|---|
| Datasheet | SCT10N120AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247 3 2 1 D(2, TAB)● AEC-Q101 qualified
● Very tight variation of on-resistance vs. temperature
● Very high operating temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● Motor drives● EV chargers
● High voltage DC-DC converters
● Switch mode power supplies G(1) S(3) AM01475v1_noZen
DESCRIPTION
The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120AG Product summary Order code SCT10N120AG Marking SCT10N120AG Package HiP247 Packing Tube DS12509 - Rev 3 - September 2022 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Para...
