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SCTHC250N120G3AG - Automotive-grade silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Key Features

  • 1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23.
  • 1.
  • Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased effic.

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SCTHC250N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package 4 Features 1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23 • 1 • • • • • • • • Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased efficiency Low thermal resistance multi sintering package 7.3 mm minimum creepage (including 0.