Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Features
- 1 4
32
STPAK high creepage
Drain(4)
Gate(3)
Driver source(2)
Power source(1)
23.
- 1.
- Order code SCTHC250N120G3AG
VDS 1200 V
RDS(on) typ. 8.5 mΩ
AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased effic.
SCTHC250N120G3AG Datasheet
