SCTHC250N120G3AG - Automotive-grade silicon carbide Power MOSFET

Product Overview

STMicroelectronics

Part number	SCTHC250N120G3AG
Manufacturer	STMicroelectronics
File Size	963.84 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHC250N120G3AG Datasheet
Additional preview pages of the SCTHC250N120G3AG datasheet.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23.
1.
Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased effic.

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Published: Sep 21, 2024 |