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SCTW90N65G2V - Silicon carbide Power MOSFET

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW90N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ.

Key Features

  • Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitances ID 119 A.

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