STMicroelectronics SCTW90N65G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTW90N65G2V |
|---|---|
| Datasheet | SCTW90N65G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitances ID 119 A
APPLICATIONS
● Switching applications● Power supply for renewable energy systems
● High frequency DC-DC converters AM01475v1_noZen
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTW90N65G2V Product summary Order code SCTW90N65G2V Marking SCT90N65G2V Package HiP247 Packing Tube DS11832 - Rev 5 - July 2019 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
