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SCTW90N65G2V - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTW90N65G2V Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTW90N65G2V

Datasheet Details

Part number	SCTW90N65G2V
Manufacturer	STMicroelectronics
File Size	397.46 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW90N65G2V Datasheet
Additional preview pages of the SCTW90N65G2V datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ.
Very high operating junction temperature capability (TJ = 200 °C).
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitances ID 119 A.

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Published: Apr 21, 2020 |