SCTW90N65G2V Datasheet | STMicroelectronics

Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an Hi P247 package Hi P247 D(2, TAB) G(1) S(3) 3 2 1 Features Order code RDS(on) max. 650 V 24 mΩ - Very high operating junction temperature capability (TJ = 200 °C) - Very fast and robust intrinsic body diode - Extremely low gate charge and input capacitances ID 119 A Applications - Switching applications - Power supply for renewable energy systems - High frequency DC-DC converters AM01475v1_no Zen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Si C MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW90N65G2V Product summary Order code Marking SCT90N65G2V Package Hi P247 Packing Tube...