Datasheet Summary
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package
Features
Order code SCTWA40N12G24AG
VDS 1200 V
RDS(on) max. 105 mΩ
ID 33 A
HiP247-4
2 34 1
Drain(1, TAB)
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Gate(4) Driver source(3)
Power source(2)
ND1TPS2DS3G4
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed...