STMicroelectronics SCTWA40N12G24AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA40N12G24AG |
|---|---|
| Datasheet | SCTWA40N12G24AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCTWA40N12G24AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247-4 2 34 1 Drain(1, TAB)● AEC-Q101 qualified
● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200 °C)
● Source sensing pin for increased efficiency Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4
APPLICATIONS
● Main inverter (electric traction)● DC/DC converter for EV/HEV
● On board charger (OBC)
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTWA40N12G24AG Product summary Order code SCTWA40N12G24AG Marking SCT40N12G24AG Package HiP247-4 Packing Tube DS13589 - Rev 4 - November 2021 For further information contact your local STMicroelectronics sales office. SCTWA40N12G24AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (re...
