SCTWA40N12G24AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTWA40N12G24AG
Manufacturer	STMicroelectronics
File Size	219.90 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA40N12G24AG Datasheet

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

SCTWA40N12G24AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.

Order code SCTWA40N12G24AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4.

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