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SCTWA60N12G2-4AG

Manufacturer: STMicroelectronics

SCTWA60N12G2-4AG datasheet preview

Datasheet Details

Part number	SCTWA60N12G2-4AG
Datasheet	SCTWA60N12G2-4AG-STMicroelectronics.pdf
File Size	195.58 KB
Manufacturer	STMicroelectronics
Description	Automotive-grade silicon carbide Power MOSFET

SCTWA60N12G2-4AG Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA60N12G2-4AG Key Features

AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency

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