Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
Features
- Order code SCTWA60N12G2-4AG
VDS 1200 V
RDS(on) max. 58 mΩ
ID 52 A
HiP247-4
2 34 1
Drain(1, TAB).
- AEC-Q101 qualified.
- Very fast and robust intrinsic body diode.
- Extremely low gate charge and input capacitance.
- Very high operating junction temperature capability (TJ = 200 °C).
- Source sensing pin for increased efficiency
Gate(4) Driver
source(3)
Power source(2)
ND1TPS2DS3G4.
SCTWA60N12G2-4AG Datasheet
