STMicroelectronics SD57045
The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.| Part No. | SD57045 |
|---|---|
| Datasheet | SD57045 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
M243 epoxy sealed ORDER CODE SD57045 BRANDING SD57045 PIN CONNECTION 1 3ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C) Symbol Parameter V(BR)DSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1 MΩ) VGS Gate-Source Voltage ID Drain Current PDISS Power Dissipation (@ Tc = 70°C) Tj Max. Operating Junction Temperature TSTG Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance November, 19 2002 1. Drain 2. Gate 2 3. Source Value Unit 65 V 65 V ± 20 V 5 A 93 W 200 °C -65 to + 200 °C 1.4 °C/W 1/11 SD57045 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 28 V VDS = 0 V ID = 250 mA ID = 3 A ID = 5 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz DYNAMIC Symbol Test Conditions POUT VDD = 28 V IDQ = 250 mA f = 945 MHz IMD3 VDD = 28 V IDQ = 250 mA POUT = 45 W PEP GPS...
