SGSP471 Datasheet | STMicroelectronics

~1.'=,L'= SU0Ci]oi©Soo-@1rn HOJO~©'MITSOOO@~ON©~ SGSP471 SGSP472 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP471 SGSP472 Voss 100 V 80 V Ros(on) 0.0750 0.05 0 10 30 A 35 A - HIGH SPEED SWITCHING APPLICATIONS - 80 - 100 VOLTS - FOR DCIDC CONVERTERS - HIGH CURRENT> 1V DROP AT 20A - RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - - ULTRA FAST SWITCHING - EASY DRIVE FOR REDUCED SIZE AND COST INDUSTRIAL APPLICATIONS: - UNINTERRUPTIBLE POWER SUPPLIES - MOTOR CONTROLS TO-218 - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching INTERNAL SCHEMATIC DIAGRAM times make these POWER MOS transistors "ideal for high speed switching applications. Applications include DC/DC converters, UPS, battery chargers, secondary regolators, servo control, power audio amplifiers and robotics. ABSOLUTE MAXIMUM RATINGS VDS VDGR VGS 10 10 10M (e) Ptot T stg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area - Introduced in 1988 week 4 4 " June 1988 SGSP472 ±20...