SGSP474 Datasheet | STMicroelectronics

r u~1m S[K(GA]OS©O-O1@~H[L~O©l JMOO@S[KO!]ON©~ SGSP474 SGSP475 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP474 SGSP475 Voss 450 V 400 V ROS(on) 0.70 0.550 10 9A 10 A - HIGH SPEED SWITCHING APPLICATIONS - HIGH VOLTAGE - FOR OFF-LINE SMPS - HIGH CURRENT - FOR SMPS UP TO 350W - ULTRA FAST SWITCHING - FOR OPERATION AT >100k Hz - EASY DRIVE FOR REDUCED SIZE AND COST INDUSTRIAL APPLICATIONS: - SWITCHING MODE POWER SUPPLIES - MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistors. Fast switching and easy drive make these POWER MOS transistors ideal for high voltage switching applications. These applications include electronic welders, switched mode power supplies and sonar equipment. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOS VOGR VGS 10 10 10M (e) 10LM (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 SGSP475 ±20...