SMTHDT58 Datasheet | STMicroelectronics

FEATURES UNDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT: IPP = 75 A , 10/1000 µs. HOLDING CURRENT = 150m A. BREAKDOWN VOLTAGE: SMTHDT58 = 58V. SMTHDT80 = 80V. SMTHDT120 = 120V. PACKAGES: SMTHDTxx = SURFACE MOUNT PACKAGE. DESCRIPTION : TRIBALANCED PROTECTION Dedicated protection devices for ISDN LINE CARD and high speed data tele lines. Used with the remended configuration using 3 ponents, they will provide = - Dual bidirectionnal protection, with fixed breakdown voltage in both mon and differential modes. - Low capacitancesfrom lines to ground. - Very good capacitance balance : ∆C= 30 p F. ABSOLUTE RATINGS (limiting values) (-40°C ≤ Tamb ≤ +85°C) Symbol IPP ITSM di/dt dv/dt Tstg Tj Parameter Peak pulse current Non repetitive surge peak on-state current Critical rate of rise of on-state current Critical rate of rise of off-state voltage 10/1000 µs 8/20 µs tp = 20 ms Non repetitive 67% VBR Value 75 150 30 100 5 - 40 to + 150 + 150 Unit A A A/µs KV/µs °C °C FUNCTIONAL DIAGRAM. Storage and operating junction temperature range THERMAL RESISTANCES Symbol Rth (j-l) Parameter Junction-leads Thermal Resistance SMC Value 200 Unit °C/W 1/6 April 1999 - Ed: 1A SMTHDTxx Symbol VRM VBR VBO IH VT VF IBO IPP VF Parameter Stand-off voltage Breakdown voltage Breakover voltage Holding current On-state voltage Forward Voltage Drop Breakover current Peak pulse current Forward Voltage Drop VBO VBR V RM VT VF I RM 1m A IH I BO IT I PP V I IF PARAMETERS RELATED TO THE DIODE. Parameter VF Test conditions IF = 5A, TP = 500 µs Value 5 Unit V PARAMETERS RELATED TO THE PROTECTION TRISIL. Types IR max @ VRM VBR min @ IR VBO max min IBO max IH min VT max C max note1 note1 note1 note1 note2 note3 µA SMTHDT58 SMTHDT80 SMTHDT120 10 10 10 V 56 68 102 V 58 80 120 m A 1 1 1 V 80 120 180 m A 150 150 150 m A 800 800 800 m A 150 150 150 V 5 5 5 p F 400 250 200 All parameters tested at 25 °C, except where indicated . Note 1 : See the reference test circuit for IH, IBO and VBO...