STMicroelectronics SPV1001
The SPV1001 is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation.FEATURES
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● IF = 16 A, VR = 40 V Very low forward voltage drop Very low reverse leakage current 175 °C operating junction temperature K K A A K A A TO220 D2PAK
APPLICATIONS
● Photovoltaic panelsDESCRIPTION
Table 1. Device summary Order codes SPV1001D40 SPV1001D40TR SPV1001T40 TO220 Package D2PACK Packaging Tube Tape and reel Tube November 2011 Doc ID 18076 Rev 3 1/12 12 Maximum ratings SPV1001 1 Maxim 1.1 um ratings Absolute maximum ratings Table 2. Symbol VR IF IFSM ESD level Absolute maximum ratings Parameter Max DC reverse voltage Max. forward current Non repetitive peak surge (half-wave, single-phase, 60 Hz) Human body level Range [min, max] 40 16 250 Unit V A A V ≥8k 1.2 Thermal Table 3. Symbol RthJC TJ TSTG data Thermal data Parameter Thermal resistance, junction-to-ambient (D2PAK, TO220) Junction temperature operating range Storage temperature range Value 1.5 -40 to 175 -40 to 175 Unit °C/W °C °C 2/12 Doc ID 18076 Rev 3 SPV1001 Electrical characteristics 2 Electrical Table 4.