STMicroelectronics ST13007A
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.| Part No. | ST13007A |
|---|---|
| Datasheet | ST13007A Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
● DC current gain classification● High voltage capability
● Low spread of dynamic parameters
● Very high switching speed
APPLICATIONS
● Electronic ballast for fluorescent lighting● Switch mode power supplies
DESCRIPTION
TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13007 ST13007A ST13007B TO-220 Tube 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 11 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3.
