STMicroelectronics ST13007D
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.ST13007D Specifications
- Package : TO-220
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 8A
- Terminals : 3
- Collector Base Voltage : 700V
- Collector Emitter Voltage : 400V
- Emitter Base Voltage : 9V
- Collector Emitter Saturation Voltage : 1.5V
- Max Power Dissipation : 80W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | ST13007D |
|---|---|
| Datasheet | ST13007D Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIESDESCRIPTION
3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W oC oC 1/7 ST13007D THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.56 62.5 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICES Collector Cut-off Current (VBE = 0) VCE = 700 V VCE = 700 V Tc = 100 oC ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-...
