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ST93CS57 Datasheet PDF

STMicroelectronics ST93CS57

the ST93CS57 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS56 and ST93CS57 are replaced by the M93S56 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. The memory is accessed through a serial input D and output Q. The 2K bit memory is organized as 128 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection.
Part No. ST93CS57
Datasheet ST93CS57 Download
Manufacturer
STMicroelectronics
Description 2K 128 x 16 SERIAL MICROWIRE EEPROM
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ST93CS57 datasheet page 1 preview

DESCRIPTION

The ST93CS56 and ST93CS57 are 2K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Supply Voltage Ground VCC D C S PRE W ST93CS56 ST93CS57 Q VSS AI00896B June 1997 This is information on a product still in production bu t not recommended for new de signs. 1/16 ST93CS56, ST93CS57 Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93CS56 ST93CS57 S C D Q 1 2 3 4 8 7 6 5 AI00897B ST93CS56 ST93CS57 VCC PRE W VSS S C D Q 1 2 3 4 8 7 6 5 AI00898C VCC PRE W VSS Table 2.

ABSOLUTE MAXIMUM RATINGS

(1) Symbol TA TSTG TLEAD VIO VCC VESD Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package)...
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