STAP85025 Description
STAP1 The STAP85025 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.
STAP85025 Key Features
- Excellent thermal stability mon source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ES