Datasheet Details
| Part number | STB10N65K3 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 682.30 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STB10N65K3 Datasheet
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General Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Key Features
- TAB 3 1 D2PAK 3 2 1 TO-220FP TAB I2PAKFP (TO-281) 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3 VDS RDS(on) max ID PTOT 150 W 650 V 1 Ω 10 A 35 W 150 W.
- 100% avalanche tested.
- Extremely low on-resistance RDS(on).
- Gate charge minimized.
- Very low intrinsic capacitances.
- Improved diode reverse recovery characteristics.
- Zener-protected.
- 6 AM01476v1 App.