Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Features
- TAB
3 1
D2PAK
3 2 1
TO-220FP
TAB
I2PAKFP (TO-281)
3 2 1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Order codes
STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3
VDS RDS(on) max
ID PTOT 150 W
650 V 1 Ω 10 A 35 W
150 W.
- 100% avalanche tested.
- Extremely low on-resistance RDS(on).
- Gate charge minimized.
- Very low intrinsic capacitances.
- Improved diode reverse recovery
characteristics.
- Zener-protected.
- 6
AM01476v1
App.
STB10N65K3 Datasheet
