STB10N65K3 Overview
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3 Table.
STB10N65K3 Key Features
- 100% avalanche tested
- Extremely low on-resistance RDS(on)
- Gate charge minimized
- Very low intrinsic capacitances
- Improved diode reverse recovery
- Zener-protected
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