STB11NM60T4 Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
STB11NM60T4 Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance