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STB11NM60T4 - N-CHANNEL Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 11 A Package D²PAK TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.