STB11NM60T4 Datasheet | STMicroelectronics

ures Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance ID 11 A Package D²PAK TO-220 Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB11NM60T4 STP11NM60 Product summary Order code Marking B11NM60 Package D²PAK Packing Tape and reel Order code STP11NM60 Markin...