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STB11NM60-1 - N-CHANNEL Power MOSFET

Download the STB11NM60-1 datasheet PDF. This datasheet also covers the STB11NM60 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

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Note: The manufacturer provides a single datasheet file (STB11NM60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STB11NM60 N-CHANNEL Power MOSFET
STB11NM60A-1 N-Channel MOSFET
STB11NM60FD N-Channel MOSFET
STB11NM60FD-1 N-Channel MOSFET
STB11NM80 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS 600 V 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A 1 2 3 1 3 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.