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STB11NM60-VB
STB11NM60-VB Datasheet
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.012 at VGS = 10 V 0.018 at VGS = 4.5 V
ID (A)a, e 50 45
Qg (Typ) 25 nC
D
D2PAK (TO-263)
G G
D S
FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing • Server • DC/DC
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
STB11NM60 Datasheet
