STB11NM60 Description
STB11NM60-VB STB11NM60-VB Datasheet N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, e 50 45 Qg (Typ) 25 nC D D2PAK (TO-263) G G D.
STB11NM60 Key Features
- Trench Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2011/65/EU