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STB120NF10 Datasheet PDF

STMicroelectronics STB120NF10

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications.
Part No. STB120NF10
Datasheet STB120NF10 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET with FAST DIODE
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STB120NF10 datasheet page 1 preview

DESCRIPTION

It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s AUDIO AMPLIFIERS s POWER TOOLS Ordering Information SALES TYPE STB120NF10 STP120NF10 MARKING B120NF10 P120NF10 PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 120 85 480 312 2.08 10 550 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (●) Pulse width limited by safe operating area. May 2003 (1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60A, VDD = 50V 1/10 ST...
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