STB12N60DM2AG
STB12N60DM2AG is N-channel Power MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code STB12N60DM2AG
VDS @ TJ max. 650 V
RDS(on ) max. 430 mΩ
ID 10 A
- AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status STB12N60DM2AG
Product summary
Order code
Marking
12N60DM2
Package
D²PAK...
