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STB12N60DM2AG - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Key Features

  • Order code STB12N60DM2AG VDS @ TJ max. 650 V RDS(on ) max. 430 mΩ ID 10 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code STB12N60DM2AG VDS @ TJ max. 650 V RDS(on ) max. 430 mΩ ID 10 A • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.