STB12N60DM2AG Datasheet (STMicroelectronics)

Part STB12N60DM2AG
Description N-channel Power MOSFET
Category MOSFET
Manufacturer STMicroelectronics
Size 417.57 KB
Pricing from 3.17 USD, available from Newark and DigiKey.Powered by Octopart
STMicroelectronics

STB12N60DM2AG Overview

Key Specifications

Max Operating Temp: 150 °C
Min Operating Temp: -55 °C

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Features

  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested

Price & Availability

Seller Inventory Price Breaks Buy
Newark 300 1+ : 3.17 USD
10+ : 2.84 USD
25+ : 2.61 USD
50+ : 2.38 USD
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DigiKey 0 1000+ : 1.14536 USD View Offer