STB12NM60N-1 Overview
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STB12NM60N-1 Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching application
- STF12NM60N
- STP12NM60N
- STW12NM60N
- 3 Electrical characteristics
- 10 Packaging mechanical data
- 16 Revision history
- STF12NM60N
- STP12NM60N