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STB13N60M2 - N-channel MOSFET

Datasheet Summary

Description

technology.

Features

  • Order code VDS at TJ max. RDS(on) max. ID STB13N60M2 650 V 380 mΩ 11 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STB13N60M2

Datasheet Details

Part number STB13N60M2
Manufacturer STMicroelectronics
File Size 807.56 KB
Description N-channel MOSFET
Datasheet download datasheet STB13N60M2 Datasheet
Additional preview pages of the STB13N60M2 datasheet.

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Full PDF Text Transcription

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STB13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS at TJ max. RDS(on) max. ID STB13N60M2 650 V 380 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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