STB140N10F4 Overview
Description
This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and commutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.