STB17N80K5 Datasheet | STMicroelectronics

res Order code STB17N80K5 VDS 800 V RDS(on) max. 0.34 Ω ID 14 A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB17N80K5 Table 1: Device summary Marking Package 17N80K5 D²PAK Packing Tape and reel May 2016 Doc ID027690 Rev 2 This is information on a product in full production. 1/15 .st. Contents Contents 1...